1 UM3301 n-ch and p-ch fast switching mosfets rating symbol parameter n-channel p-channel units v ds drain-source voltage 30 -30 v v gs gate-sou u ce voltage f 20 3 f 20 3 v i d @t c =25 continuous drain current, v gs @ 10v 1 10 -6 a i d @t c =100 continuous drain current, v gs @ 10v 1 6 -4 a i dm pulsed drain current 2 20 -12 a eas single pulse avalanche energy 3 72 59 mj i as avalanche current 21 -19 a p d @t c =25 total power dissipation 4 2.5 2.08 w t stg storage temperature range -55 to 150 -55 to 150 t j operating junction temperature range -55 to 150 -55 to 150 symbol parameter 3 typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w 3 r jc thermal resistance junction-case 1 --- 50 /w 3 bvdss rdson id 30v 20m
10a -30v 45m
6a the UM3301 is the highest performance trench n-ch and p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UM3301 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z power management in half bridge and inverters z dc-dc converter z load switch absolute maximum ratings thermal data sop8 pin configuration product summery
2 UM3301 n-ch and p-ch fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 30 --- --- v ? bv dss a? t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.034 --- v/ v gs =10v , i d =10a --- 15 20 r ds(on) static drain-source on-resistance 2 v gs =4.5v , i d =8a --- 22 30 m : v gs(th) gate threshold voltage 1.0 1.5 2.5 v ? v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =250ua --- -5.8 --- mv/ v ds =30v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =30v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =15v , i d =10a --- 10 --- s r g gate resistance v ds =24v , v gs =0v , f=1mhz --- 2.5 --- : q g total gate charge (4.5v) --- 7.2 --- q gs gate-source charge --- 1.4 --- q gd gate-drain charge v ds =20v , v gs =4.5v , i d =10a --- 2.2 --- nc t d(on) turn-on delay time --- 4.1 --- t r rise time --- 9.8 --- t d(off) turn-off delay time --- 15.5 --- t f fall time v dd =12v , v gs =10v , r g =3.3 : i d =5a --- 6.0 --- ns c iss input capacitance --- 550 --- c oss output capacitance --- 68 --- c rss reverse transfer capacitance v ds =25v , v gs =0v , f=1mhz --- 55 --- pf symbol parameter 3 conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =10a 16 --- --- mj symbol parameter 3 conditions min. typ. max. unit i s continuous source current 1,6 --- --- 10 a i sm pulsed source current 2,6 v g =v d =0v , force current --- --- 20 a v sd diode forward voltage 2 v gs =0v , i s =5a , t j =25 --- --- 1.2 v n-channel electrical characteristics (t j =25 , unless otherwise noted) note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =21a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. diode characteristics guaranteed avalanche characteristics
3 UM3301 n-ch and p-ch fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -30 --- --- v ? bv dss a? t j bv dss temperature coefficient reference to 25 , i d =-1ma --- -0.085 --- v/ v gs =-10v , i d =-6a --- 35 45 r ds(on) static drain-source on-resistance 2 v gs =-4.5v , i d =-3a --- 65 85 m : v gs(th) gate threshold voltage -1.0 -1.5 -2.5 v ? v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =-250ua --- 0.375 --- mv/ v ds =-24v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =-24v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =-10v , i d =-6a --- 6 --- s q g total gate charge (-4.5v) --- 6.4 --- q gs gate-source charge --- 2.7 --- q gd gate-drain charge v ds =-20v , v gs =-4.5v , i d =-6a --- 3.1 --- nc t d(on) turn-on delay time --- 9 --- t r rise time --- 16.6 --- t d(off) turn-off delay time --- 21 --- t f fall time v dd =-12v , v gs =-10v , r g =3.3 : , i d =-5a --- 21.6 --- ns c iss input capacitance --- 645 --- c oss output capacitance --- 272 --- c rss reverse transfer capacitance v ds =-25v , v gs =0v , f=1mhz --- 105 --- pf symbol parameter 3 conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =-25v , l=0.1mh , i as =-10a 16 --- --- mj symbol parameter 3 conditions min. typ. max. unit i s continuous source current 1,6 --- --- -6 a i sm pulsed source current 2,6 v g =v d =0v , force current --- --- -12 a v sd diode forward voltage 2 v gs =0v , i s =-6a , t j =25 --- --- -1.2 v p-channel electrical characteristics (t j =25 , unless otherwise noted) note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the eas data shows max. rating . the test condition is v dd =-25v,v gs =-10v,l=0.1mh,i as =-19a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. guaranteed avalanche characteristics diode characteristics
4 UM3301 n-ch and p-ch fast switching mosfets 0 2 4 6 8 10 00.511.5 v ds drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 15 18 21 24 27 246810 v gs (v) r dson (m
) i d =10a 0 2 4 6 8 10 00.30.60.9 v sd , source-to-drain voltage (v) i s - source current(a) t j =150 : t j =25 : 0 1.5 3 4.5 6 02.557.510 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v i d =10a 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( : ) normalized v gs(th) 0.3 0.6 0.9 1.2 1.5 1.8 2.1 -50 0 50 100 150 t j , junction temperature ( : ) normalized on resistance n-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 v gs(th) vs. t j fig.6 normalized r dson vs. t j
5 UM3301 n-ch and p-ch fast switching mosfets 10 100 1000 15913172125 v ds drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0 0 1 10 100 0.1 1 10 100 v ds (v) i d (a) 10us 100us 10ms 100ms dc t c =25 : single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r jc ) 0.01 0.02 0.1 0.2 duty=0.5 0.001 p dm d = t on /t t jpeak = t c +p dm xr jc t on t 0.05 fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive waveform
6 UM3301 n-ch and p-ch fast switching mosfets 0 2 4 6 8 10 00.511.52 -v ds , drain-to-source voltage (v) -i d drain current (a) v gs =-10v v gs =-7v v gs =-5v v gs =-4.5v v gs =-3v 36 63 90 117 144 246810 -v gs (v) r dson (m
) id=-10a 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 : t j =25 : 0 2 4 6 8 10 04812 q g , total gate charge (nc) -v gs gate to source voltage (v) v ds =-20v i d =-6a 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( : ) normalized -v gs(th) 0.5 1.0 1.5 2.0 -50 25 100 175 t j , junction temperature ( : ) normalized on resistance p-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j
7 UM3301 n-ch and p-ch fast switching mosfets 10 100 1000 15913172125 -v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0 0 1 10 100 0.1 1 10 100 -v ds (v) -i d (a) t c =25 : single pulse dc 100ms 10ms 1ms 100us 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) p dm d = t on /t t jpeak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive waveform
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